STBV32 datasheet(2/9 Pages) STMICROELECTRONICS

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STBV32

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Table 3: Thermal Data

Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

* Pulsed: Pulsed duration = 300 µs, duty cycle

≤ 1.5 %.

Tstg

Storage Temperature

-65 to 150

°C

Max. Operating Junction Temperature

150

°C

Symbol

Parameter

Value

Unit

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-Ambient

Max

83.3

112

oC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off Current

(VBE = -1.5 V)

VCE = 700 V

Tj =125 oC

V(BR)EBO Emitter-Base

Breakdown Voltage

(IC = 0 )

IE = 10 mA

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0 )

IC = 10 mA

400

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 100 mA

IC = 1 A

IB = 250 mA

IC = 1.5 A

IB = 500 mA

0.5

1.5

VBE(sat)* Base-Emitter Saturation

Voltage

IC = 0.5 A

IB = 100 mA

IC = 1 A

IB = 250 mA

1.0

1.2

hFE

DC Current Gain

IC = 0.5 A

VCE = 2 V

IC = 1 A

VCE = 2 V

RESISTIVE LOAD

Rise Time

Storage Time

Fall Time

IC = 1 A

VCC = 125 V

IB1 = -IB2 = 200 mA

tp = 25 µs

(see figure 12)

0.7

µs

INDUCTIVE LOAD

Storage Time

IC = 1 A

Vclamp = 300 V

IB1 = 200 mA

VBE(off) = -5V

L = 50 mH

RBB = 0

(see figure 13)

0.8

µs

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