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BSC010NE2LS Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BSC010NE2LS Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc N-Channel MOSFET Transistor BSC010NE2LS www.iscsemi.com 2023-8-29 22 · ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA 25 - - V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250uA 1.2 - 2.0 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=30A - - 1.0 m RDS(ON) Drain-Source On-stage Resistance VGS=4.5V; ID=30A - - 1.3 m IGSS Gate Source Leakage Current VGS=±20V;VDS=0 - - ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=25V; VGS=0 - - 10 uA VSD Diode Forward Voltage VGS=0V,IS=30A - - 1.0 V PACKAGE OUTLINES |
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