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BSC010NE2LS Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BSC010NE2LS Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc N-Channel MOSFET Transistor BSC010NE2LS www.iscsemi.com 2023-8-29 11 DESCRIPTION · Drain Current –ID=100A@ TC=25℃ · Drain Source Voltage- VDSS= 80V(Min) APPLICATIONS · Synchronous Rectification in SMPS · Switching converters,motor driver,relay driver · Power Tools · UPS · Motor Control ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 25 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 100 A IDM Pulsed drain current @ TC=25℃ 400 A EAS Avalanche Energy, Single Pulse ,L=0.4mH, TC=25℃ 190 mJ PD Power Dissipation ,TC=25℃ 96 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.3 ℃ /W Gate Drain Source D D S S S Pin 1 |
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