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2SC4617L-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 2SC4617L-AE3-R
Description  GENERAL PURPOSE TRANSISTOR
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC4617L-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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2SC4617
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R206-081,A
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
60
V
Collector -Emitter Voltage
VCEO
50
V
Emitter -Base Voltage
VEBO
7
V
DC Collector Current
IC
150
mA
Power Dissipation
PD
150
mW
Operating Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Base Breakdown Voltage
BVCBO
IC= 50μA
60
V
Collector Emitter Breakdown Voltage
BVCEO
IC= 1mA
50
V
Emitter-base Breakdown Voltage
BVEBO
IE=50μA
7
V
Collector Cut-Off Current
ICBO
VCB=60V
0.1
μA
Emitter Cut-Off Current
IEBO
VEB= 7V
0.1
μA
DC Current Transfer Ratio
hFE
VCE=6V,Ic=1mA
120
560
Collector-Emitter Saturation Voltage
VCE(sat)
IC=50mA, IB=5mA
0.4
V
Transition Frequency
fT
VCE=12V, IE= -2mA, f=100MHz
180
MHz
Output Capacitance
Cob
VCE= 12V, IE= 0A, f=1MHz
2
3.5
pF
CLASSIFICATION OF hFE
RANK
Q
R
S
RANGE
120 ~ 270
180 ~ 390
270 ~ 560



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