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2SC4617L-AE3-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 2SC4617L-AE3-R
Description  GENERAL PURPOSE TRANSISTOR
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC4617L-AE3-R Datasheet(HTML) 3 Page - Unisonic Technologies

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2SC4617
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R206-081,A
■
TYPICAL CHARACTERICS
0 .45
mA
BASE TO EMITTER VOLTAGE, VBE (V)
0
0.6
1.0 1.2
1.6
COLLECTOR TO EMITTER VOLTAGE, VCE (V)
80
00.8
1.2
1.6
20
50
100
40
0.4
2.0
Grounded emitter propagation characteristics
20
10
2
0.5
5
1
0.2
0.1
0.2 0.4
0.8
1.4
VCE = 6V
60
0
Ta = 25℃
0.40m
A
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I B = 0A
Grounded emitter output characteristics(Ι)
COLLECTOR CURRENT, IC (mA)
200
0.2
5
10
60
20
500
50
0.5
200
100
10
DC current gain vs. collector current (Ι)
Ta = 25℃
VCC = 5V
3V
1V
1
2
20
100
COLLECTOR CURRENT, IC (mA)
0.2
0.2
5 10
50
0.02
0.5
0.05
0.5
200
0.1
0.01
Collector-emitter saturation voltage vs.
collector current
Ta = 25℃
IC/IB = 5V
12
20
COLLECTOR CURRENT, IC (mA)
200
0.2
5 10
60
20
500
50
0.5
200
100
10
DC current gain vs. collector current (Ⅱ)
12
20
100
VCC = 5V
Ta = 100℃
25℃
100
Ta=100℃
25℃
0.50mA
COLLECTOR TO EMITTER VOLTAGE, VCE (V)
8
0
8
12
16
2
10
4
420
6
0
Ta = 25℃
3μA
IB =
0A
Grounded emitter output characteristics(¢º)
6μA
9μ A
12 μA
15 μA
18 μA
21 μA
24 μA
27 μA
30μA
20
10



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