STP11NM60 datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1

Electrical ratings

3/16

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/D²PAK/I²PAK

TO-220FP

VGS

Gate- source voltage

±30

Drain current (continuous) at TC = 25°C

11(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC=100°C

7(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

44(1)

PTOT

Total dissipation at TC = 25°C

160

Derating Factor

1.28

0.28

W/°C

dv/dt(3)

ISD ≤ 11A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (DC)

2500

Operating junction temperature

-65 to 150

°C

Tstg

Storage temperature

150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220/D²PAK/I²PAK

TO-220FP

Rthj-case

Thermal resistance junction-case Max

0.78

3.57

°C/W

Rthj-a

Thermal resistance junction-ambient Max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

5.5

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

350

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