STP11NM60 datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1

4/16

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

600

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 600 V

VDS = 600 V, Tc=125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±30V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 5.5A

0.4

0.45

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID =5.5A

5.2

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

1000

230

Coss eq

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

inceases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0V to 480V

100

Gate input resistance

f=1 MHz gate DC bias = 0

Test signal level = 20mV

open drain

1.6

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=480V, ID = 11A

VGS =10V

(see Figure 15)

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