CEP75A3/CEB75A3

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

9

1

3

-100

100

1

mΩ

V

nA

nA

µ

A

V

2

Gate Body Leakage Current, Reverse

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Test Condition

Typ

Max

25

f = 1.0 MHz

1190

280

155

13

5

33

7

26

10

66

14

9.8

3.4

2.7

13

69

1.2

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

7

13

mΩ

10

6

Forward Transconductance

S

12

0.85

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testin