CEP75A3 datasheet(1/4 Pages) CET

Part #	CEP75A3

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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N-Channel Enhancement Mode Field Effect Transistor

CEP75A3/CEB75A3

FEATURES

25V, 69A, RDS(ON) = 9mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-263 & TO-220 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

25

0.45

68

276

69

±20

V

W

A

V

W/ C

1

RDS(ON) = 13mΩ @VGS = 4.5V.

Lead free product is acquired.

Rev 1. 2006.Nov

http://www.cetsemi.com

S

G

D

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

62.5

2.2

RθJC

RθJA

Details are subject to change without notice .

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