HT1MOA3S30SLASHESLASH3 datasheet(6/24 Pages) PHILIPS

6 / 24 page

Specifications of the HT1 MOA3 S30

Rev. 1.1

1997-08-19

Ht1moa3.doc/HS

Page 6 of 24

2.6 Electrical Specifications

Symbol

min

typ

max

Comment / Conditions

Absolute Maximum Ratings

Junction Temperature

-55°C

140°C

Input Peak Current

INpeak

30 mA

Latch up Current

100 mA

MIL-STD 883D, Method 3023

ESD

2 kV

MIL-STD 883D, Method 3015.7,

Human Body

Operating Range

Temperature

-40°C

85°C

RThJunctionAmbient

≤ 30 K/W @

IINpeak = 30 mA

Input Threshold Voltage

1) 3)

VIN,TH

3,1 Vp

4,2 Vp

start modulation after SETCC

Input Read Voltage

1) 3)

VIN,RD

3,5 Vp

4,5 Vp

read E²PROM

Input Write Voltage

1) 3)

VIN,WR

3,7 Vp

4,7 Vp

write E²PROM

Demodulator

Range

VDEM_R

2,0 Vp

4,0 Vp

VINHigh - VINLow @ VINHigh = 5,0 Vp

T0=8 µs, TMOD=6*T0

Modulator

R_MOD linear

RMODL

4,5 k

Ω V

INLow

≤ 2,0 V

R_MOD nonlinear

RMODNL

3,6 k

Ω V

INLow

≥ 2,0 V

Resonance Capacitor

CResInit

189 pF

210 pF

231 pF

VIN = 4,0 Vp

EEPROM

Write Current

25 µA

VDD = 2,8 V

Read Current

9 µA

VDD = 2,8 V

Data Retention

Years

@ 55°C

Write Endurance

Cycles

100.000

V

 = V

IN1

− V

IN2

 ... voltage between connection pads

VINHigh

input voltage before modulation

VINLow

input voltage during modulation

TMOD

duration of the modulation

@ Ri = 10 k

Ω resistance of measurement equipment

tested on silicon level

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