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ISF1059 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISF1059 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page  ISF1059 eq STH260N6F6-6 N-Channel Power MOSFET www.iscsemi.com 1 FEATURES ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.4mΩ(Max)@VGS= 10V APPLICATIONS · Switching applications · Power tools · Motor control Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous @Tc=25℃ Tc=100℃ 180 180 A IDM Drain Current-Single Pulsed 720 A PD Total Dissipation @TC=25℃ 300 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.5 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 35 ℃ /W |
Similar Part No. - ISF1059 |
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Similar Description - ISF1059 |
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