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NE1617 Datasheet(PDF) 9 Page - NXP Semiconductors |
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NE1617 Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 16 page ![]() Philips Semiconductors Product specification NE1617 Temperature monitor for microprocessor systems 1999 Mar 19 9 FUNCTIONAL DESCRIPTION The NE1617 contains an integrating A-to-D converter, an analog multiplexer, a status register, digital data registers, SMBUS interface, associated control logic and a local temperature sensor or channel. The remote diode-type sensor or channel should be connected to the D+ and D– pins properly. Temperature measurements or conversions are either automatically and periodically activated when the device is in free-running mode (both STBY pin = high, and the configuration register BIT6 = low) or generated by one-shot command. The free-running period is selected by changing the programmable data of the conversion rate register as described later. For each conversion, the multiplexer switches current sources through the remote and local temperature sensors over a period of time, about 60ms, and the voltages across the diode-type sensors are sensed and converted into the temperature data by the A-to-D converter. The resulting temperature data is then stored in the temperature registers, in 8-bit, two’s complement word format and automatically compared with the limits which have been programmed in the temperature limit registers. Results of the comparison are reflected accordingly by the flags stored in the status register, an out-of-limit condition will set the ALERT output pin to its low state. Because both channels are automatically measured for each conversion, the results are updated for both channels at the end of every successful conversion. Remote diode selection The method of the temperature measurement is based on the change of the diode VBE at two different operating current levels given by: DVBE + KT q < LN(N) where: K: Boltzman’s constant T: absolute temperature in ° Kelvin q: charge on the electron N: ratio of the two currents LN: natural logarithm The NE1617 provides two current sources of about 10 µA and 100µA in measuring the remote diode VBE and the sensed voltage between two pins D+ and D– is limited between 0.25V and 0.95V. The external diode must be selected to meet this voltage range at these two current levels. The diode-connected PNP transistor provided on the microprocessor is typically used, or the discrete diode-connected transistor 2N3904 is recommended as an alternative. Even though the NE1617 integrating A-to-D converter has a good noise performance, using the average of 10 measurement cycles, high frequency noise filtering between D+ and D– should be considered. An external capacitor of 2200pF typical (but not higher than 3300pF) connected between D+ and D– is recommended. Capacitance higher than 3300pF will introduce measurement error due to the rise time of the switched current source. Address logic The address pins of the NE1617 can be forced into one of three levels: Low (GND), High (VDD), or not connected (NC). Because the NE1617 samples and latches the address pins at the starting of every conversion, it is suggested that those address pins should be hardwired to the logic applied, so that the logic is consistently existed at the address pins. During the address sensing period, the device forces a current at each address pin and compares the voltage developed across the external connection with the predefined threshold voltage in order to define the logic level. If an external resistor is used for the connection of the address, then its value should be less than 2k Ω to prevent the error in logic detection from happening. Resistors of 1k Ω is recommended. |
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