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IRFPS35N50LPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFPS35N50LPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRFPS35N50LPbF SMPS MOSFET HEXFET® Power MOSFET 09/14/04 Super-247™ VDSS RDS(on) typ. Trr typ. ID 500V 0.125 Ω 170ns 34A Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Enhanced dv/dt capabilities offer improved ruggedness. • Higher Gate voltage threshold offers improved noise immunity . Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 34 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 22 A IDM Pulsed Drain Current 140 PD @TC = 25°C Power Dissipation 450 W Linear Derating Factor 3.6 W/°C VGS Gate-to-Source Voltage ±30 V dv/dt Peak Diode Recovery dv/dt e 15 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 1.1(10) N•m (lbf•in) Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 34 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– 140 integral reverse (Body Diode) Ã c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 34A, VGS = 0V f trr Reverse Recovery Time ––– 170 250 ns TJ = 25°C, IF = 34A ––– 220 330 TJ = 125°C, di/dt = 100A/µs f Qrr Reverse Recovery Charge ––– 670 1010 nC TJ = 25°C, IS = 34A, VGS = 0V f ––– 1500 2200 TJ = 125°C, di/dt = 100A/µs f IRRM Reverse Recovery Current ––– 8.5 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) PD- 95140 |
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