SCM40N120PCT datasheet(1/5 Pages) GWSEMI

Part #	SCM40N120PCT

Description	1200V /40 mΩ N-channel SiC Power MOSFET

PDF	5 Pages

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Manufacturer	GWSEMI [Goodwork Semiconductor Co., Ltd .]

Direct Link	http://www.goodwork.com.tw/

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1200V /40 mΩ N-channel SiC Power MOSFET

SCM40N120PCT

Features



Low on-resistance RDS(on)



Best thermal conductivity and behavior



High speed switching



High robustness of dv/dt



Low capacitances and low gate charge



Low gate resistance for high-frequency switching



Easy to parallel



Halogen Free, RoHS Compliant

Applications



Switching mode power supply



PV inverter



Uninterruptible Power Supply



Motor Drives



DC/DC converters



EV charging

TO-247

1

2

3

Circuit Diagram

2

3

1:

2:

3:

*1:

Gate

Drain

Source

Body Diode

1

*1

Absolute Maximum Rating (Ta = 25°C)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source voltage

1200

V

VGSS

Gate-Source voltage (DC)

-4 to 20

V

ID

Continuous Drain Current

55

A

Tj

Junction temperature

175

°

C

TSTG

Storage temperature

-55/+175

°

C

PD

Power dissipation

288

W

Thermal characteristics

Symbol

Parameter

Typ.

Units

Rth (JC)

Thermal resistance, junction-case

0.4

0.52

°C /W

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SCM40N120PCT Datasheet(PDF) 1 Page - Goodwork Semiconductor Co., Ltd .

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