SCM40N120PCT datasheet(2/5 Pages) GWSEMI

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Electrical Characteristics (Ta = 25 °C)

Symbol

Parameter

Min.

Typ.

Max. Units

Test Condition

V(BR)DSS Drain-Source

breakdown voltage

1200

VGS = 0V, ID=250uA

IDSS

Zero gate voltage

drain current

2.8

5.6

VDS=1200V, VGS = 0V,Tj= 25 °C

VDS=1200V, VGS = 0V,Tj=150 °C

RDS(on)

Drain-Source

on-state resistance

mΩ VGS = 18V, ID =27.5A, Tj= 25 °C

VGS = 18V, ID =27.5A, Tj= 125°C

VGS(th)

Gate threshold voltage

2.0

3.0

VDS = 10V, ID = 5 mA

IGSS+

Gate-Source

leakage current

100

VGD = 20V, VDS = 0V

IGSS-

Gate-Source

leakage current

-100

VGD = -4V, VDS = 0V

Gate resistance

4.0

f = 1MHz, open drain

SCM40N120PCT

Electrical Characteristics (Ta = 25 °C)

Symbol

Parameter

Min.

Typ.

Max. Units

Test Condition

Ciss

Input capacitance

2600

VGS = 0V,

VDS = 800V,

f = 1MHz

Coss

Output capacitance

100

Crss

Reverse capacitance

Total gate charge

150

VDD = 600V

ID = 27.5A

VGS = 18V

Qgs

Gate to source charge

Qgd

Gate to drain charge

Body diode Electrical Characteristics (Ta = 25 °C)

Symbol

Parameter

Min.

Typ.

Max. Units

Test Condition

Body diode continuous,

forward current

VSD

Diode forward voltage

VGS = 0V, IS = 27.5A

SCM40N120PCT Datasheet(PDF) 2 Page - Goodwork Semiconductor Co., Ltd .

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