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PHN405 Datasheet(PDF) 9 Page - NXP Semiconductors |
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PHN405 Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 12 page ![]() 1998 Mar 17 9 Philips Semiconductors Product specification 4 N-channel 60 m Ω FET array enhancement mode MOS transistors PHN405 Fig.12 Temperature coefficient of gate-source threshold voltage as a function of junction temperature; typical values. VGSth at VDS =VGS; ID = 1 mA. k V GSth at Tj V GSth at 25 ° C -------------------------------------- = handbook, halfpage −75 k 1.2 1 0.8 0.6 −25 175 25 75 125 MDA802 Tj (°C) Fig.13 Temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values. RDSon at: (1) VGS = 10 V; ID =2A. (2) VGS = 4.5 V; ID =1A. k R DSon at Tj R DSon at 25 ° C ----------------------------------------- = handbook, halfpage −75 k 1.8 1.4 1 0.6 −25 175 25 75 (2) 125 MDA803 Tj (°C) (1) |
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