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PHT4NQ10LT Datasheet(PDF) 1 Page - NXP Semiconductors |
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PHT4NQ10LT Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 13 page ![]() PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 Product specification c c M3D087 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT4NQ10LT in SOT223. 2. Features s TrenchMOS™ technology s Fast switching s Low on-state resistance s Surface mount package s Logic level compatible. 3. Applications s Primary side switch in DC to DC convertors s High speed driver s Fast general purpose switch. 4. Pinning information 1. TrenchMOS is a trademark of Royal Philips Electronics Table 1: Pinning - SOT223, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) SOT223 2 drain (d) 3 source (s) 4 drain (d) 4 123 MSB002 - 1 Top view s d g MBB076 |
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