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PHT4NQ10LT Datasheet(PDF) 3 Page - NXP Semiconductors

Part # PHT4NQ10LT
Description  N-channel enhancement mode field-effect transistor
PDF  13 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHT4NQ10LT Datasheet(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 11 September 2000
3 of 13
9397 750 07342
© Philips Electronics N.V. 2000. All rights reserved.
VGS ≥ 5V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse
Unclamped inductive load; VDD ≤ 15 V; RGS =50 Ω;
VGS = 5 V; starting Tj =25 °C and 125 °C.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
03aa17
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
Tsp (
o
C)
(%)
03aa25
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
T
sp
(
o
C)
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ac48
10-2
10-1
1
10
102
110
102
103
VDS
I
D
(A)
D.C.
100 ms
10 ms
1 ms
tp= 10 µs
100 µs
tp
tp
T
P
t
T
δ =
RDSon = VDS/ ID
03ac92
10-1
1
10
10-2
10-1
110
tp (ms)
IAS
(A)
Tj prior to avalanche = 125ºC
25ºC



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