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PRF949 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PRF949 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page ![]() 1999 Oct 29 3 Philips Semiconductors Preliminary specification UHF wideband transistor PRF949 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 1.5 V IC DC collector current − 50 mA IC(AV) average collector current − 50 mA Ptot total power dissipation Ts =60 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point Ptot = 180 mW; Ts =90 °C; note 1 335 K/W |
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