1999 Oct 29

4

Philips Semiconductors

Preliminary specification

UHF wideband transistor

PRF949

CHARACTERISTICS

°C unless otherwise specified.

Note

1.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC characteristics

collector-base breakdown voltage

20

−−

V

collector-emitter breakdown

voltage

10

−−

V

emitter-base breakdown voltage

1.5

−−

V

forward base-emitter voltage

−−

1.05

V

collector-base leakage current

−−

100

nA

emitter-base leakage current

−−

100

nA

DC current gain

100

150

200

−

150

−

AC characteristics

feedback capacitance

−

0.3

tbf

pF

transition frequency

7

9

−

GHz

insertion gain

13

15

−

dB

maximum unilateral power gain;

note 1

°C; f = 1 GHz

−

16

−

dB

°C; f = 2 GHz

−

10

−

dB

NF

noise figure

f= 1 GHz

−

1.5

2.5

dB

f= 2 GHz

−

2.1

−

dB

G

UM

10

s

21

2

1s

11

2

–

() 1s

22

2

–

()

-------------------------------------------------------- dB

log

=