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4N60P Datasheet(PDF) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # 4N60P
Description  600V N-Channel Enhancement Mode MOSFET
PDF  9 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

4N60P Datasheet(HTML) 4 Page - EVER SEMICONDUCTOR CO.,LIMITED

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10-2
10-1
101
100
10-1
10-2
10-3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
Typical Characteristics T
J = 25º
C, unless otherwise noted
0
10
20
30
40
V
GS = 0V
f = 1MHz
C
iss
C
oss
C
rss
Figure 7. Capacitance
Figure 8. Gate Charge
V
DS, Drain-to-Source Voltage (V)
Q
g, Total Gate Charge (nC)
103
102
101
100
0
2
4
6
8
10
0
3
6
9
12
15
V
DD = 120V
V
DD = 480V
V
DD = 400V
Figure 10. Transient Thermal Impedance
TO-220, TO-251,TO-252
Figure 9. Transient Thermal Impedance
TO-220F
10-6
10-5
10-4
10-3
10-2
10-1
100
101
101
100
10-1
10-2
10-3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10-4
10-3
10-6
10-5
10-7
T
p, Pulse Width (s)
T
p, Pulse Width (s)
4N60F/P/Y/D
600V N-Channel Enhancement Mode MOSFET
Rev:2023A2
4



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