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4N60P Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # 4N60P
Description  600V N-Channel Enhancement Mode MOSFET
PDF  9 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

4N60P Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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FEATURES
Fast switching
 100% avalanche tested
 Improved dv/dt capability
APPLICATIONS
 Switch Mode Power Supply (SMPS)
 Uninterruptible Power Supply (UPS)
 Power Factor Correction (PFC)
Absolute Maximum Ratings T
C = 25º
C, unless otherwise noted
Parameter
Symbol
Value
Unit
TO-220F
TO-220
TO-251
TO-252
Drain-Source Voltage (V
GS = 0V)
V
DSS
600
V
Continuous Drain Current
I
D
3
A
Pulsed Drain Current
(note1)
I
DM
12
A
Gate-Source Voltage
V
GSS
±30
V
Single Pulse Avalanche Energy
(note2)
E
AS
90
mJ
Avalanche Current
(note1)
I
AR
3
A
Repetitive Avalanche Energy
(note1)
E
AR
10
mJ
Power Dissipation (T
C = 25º
C)
P
D
30
45
W
Operating Junction and Storage Temperature Range
T
J, Tstg
-55~+150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
TO-220F
TO-220
TO-251
TO-252
Thermal Resistance, Junction-to-Case
R
thJC
4.1
2.8
ºC/W
Thermal Resistance, Junction-to-Ambient
R
thJA
62.5
60
4N60F/P/Y/D
600V N-Channel Enhancement Mode MOSFET
Rev:2023A2
1


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