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BAS16J Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BAS16J
Description  Single high-speed switching diode
PDF  10 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAS16J Datasheet(HTML) 3 Page - NXP Semiconductors

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BAS16J_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 8 March 2007
3 of 10
NXP Semiconductors
BAS16J
Single high-speed switching diode
5.
Limiting values
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
[2]
Tj =25 °C prior to surge.
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[4]
Reflow soldering is the only recommended soldering method.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2]
Reflow soldering is the only recommended soldering method.
[3]
Soldering point of cathode tab.
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-
100
V
VR
reverse voltage
-
100
V
IF
forward current
[1] -
250
mA
IFRM
repetitive peak forward
current
tp ≤ 0.5 ms;
δ≤ 0.25
-
500
mA
IFSM
non-repetitive peak forward
current
square wave
[2]
tp = 100 µs
-
3.3
A
tp =1ms
-
2
A
tp =10ms
-
1.5
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[3][4] -
550
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1][2] -
-
230
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[3] -
-
55
K/W



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