BAS16J datasheet(6/10 Pages) NXP

6 / 10 page

BAS16J_1

Product data sheet

Rev. 01 — 8 March 2007

6 of 10

NXP Semiconductors

BAS16J

Single high-speed switching diode

Test information

(1) IR =1mA

Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05

Oscilloscope: rise time tr = 0.35 ns

Fig 5.

Reverse recovery time test circuit and waveforms

Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ≤ 0.005

Fig 6.

Forward recovery voltage test circuit and waveforms

trr

(1)

+ IF

output signal

10 %

90 %

input signal

V = VR + IF × RS

RS = 50 Ω

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

10 %

90 %

input signal

RS = 50 Ω

Ri = 50 Ω

OSCILLOSCOPE

1 k

Ω

450

Ω

D.U.T.

mga882

VFR

output signal

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