IRF7807VPBF datasheet(2/8 Pages) IRF

2 / 8 page

IRF7807VPbF

www.irf.com

Notes: Repetitive rating; pulse width limited by max. junction temperature.

Pulse width

≤ 400 µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board

Typ = measured - Q

oss

Typical values of RDS(on) measured at V

GS = 4.5V, QG, QSW and QOSS

measured at V

GS = 5.0V, IF = 7.0A.

Rθ is measured at TJ approximately 90°C

Device are 100% tested to these parameters.

Electrical Characteristics

Parameter

Symbol

Min Typ Max Units

Drain-Source Breakdown Voltage

BVDSS

–––

Static Drain-Source On-Resistance

RDS(on)

–––

Ω

Gate Threshold Voltage

VGS(th)

1.0

–––

3.0

–––

100

–––

100

Gate-Source Leakage Current*

IGSS

–––

––– ±100

Total Gate Charge*

–––

9.5

Pre-Vth Gate-Source Charge

QGS1

–––

2.3

–––

Post-Vth Gate-Source Charge

QGS2

–––

1.0

–––

Gate-to-Drain Charge

QGD

–––

2.4

–––

Switch Charge (Qgs2 + Qgd)QSW

–––

3.4

5.2

Output Charge*

QOSS

–––

16.8

VDS = 16V, VGS = 0

Gate Resistance

0.9

–––

2.8

Ω

Turn-On Delay Time

td(on)

–––

6.3

–––

Rise Time

–––

1.2

–––

Turn-Off Delay Time

td(off)

–––

Fall Time

–––

2.2

–––

Source-Drain Ratings and Characteristics

Parameter

Symbol Min Typ Max Units

Diode Forward Voltage*

VSD

–––

1.2

Reverse Recovery Charge

(with Parallel Schottsky)

–––

IS = 7.0A d ,VGS = 0V

–––

Qrr

Conditions

VGS = 0V, ID = 250µA

VGS = 4.5V, ID = 7.0A d

VDS = VGS, ID = 250µA

VDS = 30V, VGS = 0

VGS = ± 20V

IDSS

Drain-Source Leakage Current

VDS = 16V

VDS = 24V, VGS = 0

VDS = 24V, VGS = 0, TJ = 100°C

VGS = 5V, ID = 7.0A

µA

Conditions

VGS = 5V, RG = 2Ω

VDD = 16V

ID = 7A

Resistive Load

–––

Reverse Recovery Charge

di/dt = 700A/µs , (with 10BQ040)

VDS = 16V, VGS = 0V, IS = 7.0A

di/dt = 700A/µs

VDS = 16V, VGS = 0V, IS = 7.0A

Qrr(s)

–––

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