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IRF7807VPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7807VPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  PD-95210 IRF7807VPbF 11/3/04 DEVICE CHARACTERISTICS • N Channel Application Specific MOSFET • Ideal for Mobile DC-DC Converters • Low Conduction Losses • Low Switching Losses 100% R G Tested Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807V devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V. Top V iew 8 1 2 3 4 5 6 7 D D D D G S A S S SO-8 IRF7807V RDS(on) 17 m Ω QG 9.5 nC QSW 3.4 nC QOSS 12 nC Absolute Maximum Ratings Symbol Units VDS VGS Continuous Drain or Source TA = 25°C (VGS ≥ 4.5V) TA = 70°C IDM TA = 25°C TA = 70°C TJ , TSTG °C IS ISM Thermal Resistance Symbol Typ Max Units RθJA ––– 50 RθJL ––– 20 A W A °C/W Parameter Maximum Junction-to-Ambient eh Maximum Junction-to-Lead h Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Parameter V Power Dissipation eÃÃÃÃÃÃÃ Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current PD ID IRF7807V 8.3 2.5 66 2.5 -55 to 150 1.6 66 30 ±20 6.6 HEXFET® Power MOSFET |
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