PESDNC2FD5VB datasheet(1/4 Pages) EVVOSEMI

Part #	PESDNC2FD5VB

Description	ESD Protection Devices ROHS

PDF	4 Pages

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Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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The

PESDNC2FD5VB

protects

sensitive

semiconductor

components

from damage or

upset due to electrostatic discharge (ESD) and

other voltage induced transient events. They

feature large cross-sectional area junctions for

conducting

high

transient

currents,

offer

desirable electrical characteristics for board

level protection, such as fast response time,

low operating voltage. It gives designer the

flexibility to protect one bi-directional line in

applications where arrays are not practical.

80W peak pulse power per line (tP = 8/20μs)

DFN1006 package

Replacement for MLV(0402)

Bidirectional configurations

Response time is typically < 1ns

Low clamping voltage

RoHS compliant

Transient protection for data lines to

IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);

IEC61000-4-4 (EFT) 40A (5/50ns)

Lead finish:100% matte Sn(Tin)

Mounting position: Any

Qualified max reflow temperature:260℃

Device meets MSL 1 requirements

Pure tin plating: 7 ~ 17 um

Pin flatness:≤3mil

Description

Feature

Applications

Cellular phones

Portable devices

Digital cameras

Power supplies

Mechanical Characteristics

PESDNC2FD5VB

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Rating

Symbol

Value

Units

Peak Pulse Power (tp=8/20μs)

Ppp

80

W

Operating Temperature

TJ

-55 to +150

℃

Storage Temperature

TSTG

-55 to +150

℃

Absolute maximum rating@25℃

Rev:2023A2

1

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PESDNC2FD5VB Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

PESDNC2FD5VB Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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