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RM65N40DF Datasheet(PDF) 1 Page - Rectron Semiconductor |
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RM65N40DF Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 7 page ![]() Feature z 40V,65A RDS ON 5.9m VGS=10V RDS ON 10m VGS=4.5V z Advanced Trench Technology z Lead free product is acquired z Excellent R DS ON and Low Gate Charge Application z PWM applications z Load Switch z Power management Device Marking Device Device Package Reel Size Tape width Quantity (PCS) 65N40 RM65N40DF DFN5X6-8L - Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Ta =25 ) ID 65 A Continuous Drain Current (Ta =100 ) ID 41 A Pulsed Drain Currenr (1) IDM 260 A Singel Pulsed Avalanche Energy (2) EAS 81 mJ Power Dissipation PD 45 W Thermal Resistance from Junction to Ambient RθJA 46 /W Junction Temperature TJ 150 Storage Temperature TSTG -55~ +150 N-Channel Enhancement Mode Power MOSFET RM65N40DF z Halogen-free Absolute Maximum Ratings (TC=25 unless otherwise noted) REV:A Package Marking and Ordering Information Schematic Diagram Top View Bottom View D D D D G S S S - - 2022- Thermal Resistance from Junction to Case RθJC 1.42 /W 06/59 (4) (4) |
Similar Part No. - RM65N40DF |
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Similar Description - RM65N40DF |
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