Parameter

Symbol

Test Condition

Min

Type

Max

Unit

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250μA

40

-

-

V

Zero gate voltage drain current

IDSS

VDS =40V, VGS = 0V

-

-

1

μA

Gate-body leakage current

IGSS

VGS = 20V,VDS = 0V

-

-

±100

nA

Gate threshold voltage

(3)

VGS(th)

VDS =VGS, ID =250μA

1

1.5

2.5

V

Drain-source on-resistance

(3)

RDS(on)

VGS =10V, ID =30A

-

5.0

5.9

mΩ

VGS =4.5V, ID =20A

-

7.5

10

Dynamic characteristics

Input Capacitance

Ciss

VDS =20V, VGS =0V, f =1MHz

-

2448

-

pF

Output Capacitance

Coss

-

396

-

Reverse Transfer Capacitance

Crss

-

200

-

Switching characteristics

Turn-on delay time

td(on)

VDD=20V, ID=1A, RL=6Ω

VGS=10V, RG=1Ω

-

13

-

ns

Turn-on rise time

tr

-

11

-

Turn-off delay time

td(off)

-

41

-

Turn-off fall time

tf

-

14

-

Total Gate Charge

Qg

VDS=20V, ID=10A,

VGS=10V

-

56

-

nC

Gate-Source Charge

Qgs

-

5

-

Gate-Drain Charge

Qgd

-

13.5

-

Source-Drain Diode characteristics

Diode Forward voltage

(3)

VDS

VGS =0V, IS=1A

-

-

1.2

V

Diode Forward current

(4)

IS

-

-

65

A

Notes:

1. Repetitive Rating: pulse width limited by maximum junction temperature

2. EAS Condition:TJ=25 ,VDD=20V,RG=25 ,L=0.5mH,IAS=18A

3. Pulse Test: pulse width≤300μs, duty cycle≤2%

4.

Electrical Characteristics (TC=25

unless otherwise noted)

Surface Mounted on FR4 Board By using 1Square inch Pad