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ISG2111 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISG2111
Description  Field-Stop IGBT
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISG2111 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISG2111 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISG2111 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISG2111 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISG2111 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISG2111
eq IKA06N60T
Field-Stop IGBT
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
4.5
℃
/W
Rth j-c
Thermal Resistance,Junction to Case Diode
4.0
℃
/W
STATIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0, IC= 0.25mA
600
--
--
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE, IC= 0.18mA
3.5
--
5.0
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A, VCE= 15V,
TC=25℃
--
1.5
2.1
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 50A, VCE= 15V,
TC=150℃
--
2.0
--
V
ICES
Zero Gate Voltage Collector Current
VCE= 600V, VGE=0
--
--
40
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V, VCE=0
--
--
±
100
nA
REVERSE DIODE (FRED)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VF
Diode Forward Voltage
IF= 6A,TJ=25℃
--
1.6
2.1
V
IF= 6A,TJ=150℃
--
1.5
--
V



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