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STGHU30M65DF2AG Datasheet(PDF) 4 Page - STMicroelectronics

Part # STGHU30M65DF2AG
Description  Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGHU30M65DF2AG Datasheet(HTML) 4 Page - STMicroelectronics

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Table 5. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A, VGE = 15 V,
RG = 10 Ω (see Figure 25. Test circuit for
inductive load switching)
22
-
ns
tr
Current rise time
10
-
ns
di/dt(on)
Turn-on current slope
2350
-
A/µs
td(off)
Turn-off delay time
151
-
ns
tf
Current fall time
152
-
ns
Eon(1)
Turn-on switching energy
210
-
µJ
Eoff(2)
Turn-off switching energy
1147
-
µJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 30 A, VGE = 15 V,
RG = 10 Ω, TJ = 175 °C (see Figure 25. Test
circuit for inductive load switching)
165
-
ns
tr
Current rise time
11
-
ns
di/dt(on)
Turn-on current slope
2120
-
A/µs
td(off)
Turn-off delay time
165
-
ns
tf
Current fall time
238
-
ns
Eon(1)
Turn-on switching energy
382
-
µJ
Eoff(2)
Turn-off switching energy
1530
-
µJ
tsc
Short-circuit withstand time
VCC = 400 V, VGE = 15 V, starting TJ ≤ 150 °C
6
-
µs
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 30 A, VR = 400 V, VGE = 15 V,
di/dt = 1000 A/µs (see Figure 25. Test circuit
for inductive load switching)
-
223
-
ns
Qrr
Reverse recovery charge
-
1.207
-
μC
Irrm
Reverse recovery current
-
16
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
90
-
A/µs
Err
Reverse recovery energy
-
0.265
-
mJ
trr
Reverse recovery time
IF = 30 A, VR = 400 V, VGE = 15 V,
di/dt = 1000 A/µs, TJ = 175 °C
(see Figure 25. Test circuit for inductive load
switching)
-
325
-
ns
Qrr
Reverse recovery charge
-
3.35
-
μC
Irrm
Reverse recovery current
-
25
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
450
-
A/µs
Err
Reverse recovery energy
-
0.845
-
mJ
STGHU30M65DF2AG
Electrical characteristics
DS14705 - Rev 1
page 4/16



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