August. 2012 : Rev0

1/6

www.trinnotech.com

TGPF30N40P

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

V

CES

400

V

Gate-Emitter Voltage

V

GES

±30

V

Continuous Current

T

C = 25 ℃

I

c

60

A

T

C = 100 ℃

30

A

Pulsed Collector Current (Note 1)

I

CM

300

A

Power Dissipation

T

C = 25 ℃

P

D

20.8

W

T

C = 100 ℃

8.3

W

Operating Junction Temperature

T

J

-55 ~ 150

℃

Storage Temperature Range

T

STG

-55 ~ 150

℃

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

T

L

300

℃

G C E

C

Parameter

Symbol

Value

Unit

Maximum Thermal resistance, Junction-to-Case

RθJC

6.0

℃/W

Maximum Thermal resistance, Junction-to-Ambient

RθJA

62.5

℃/W

Notes :

(1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%.

Absolute Maximum Ratings

Thermal Characteristics

Features:

• 400V Trench Technology

• High Speed Switching

• Low Conduction Loss

• Positive Temperature Coefficient

• Easy parallel Operation

• RoHS compliant

• JEDEC Qualification

Applications :

Plasma Display Panel, Soft switching application,

Ordering Part Number

Package

Packaging type

Marking

Remark

TGPF30N40P

TO-220F

Tube

TGPF30N40P

RoHS

TGPF30N40P-R

TO-220F(R-Forming)

Tube

TGPF30N40P

RoHS

TGPF30N40P-L

TO-220F(L-Forming)

Tube

TGPF30N40P

RoHS