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TGPF30N40P-R Datasheet(PDF) 3 Page - TRinno Technology Co., Ltd. |
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TGPF30N40P-R Datasheet(HTML) 3 Page - TRinno Technology Co., Ltd. |
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3 / 6 page ![]() August. 2012 : Rev0 3/6 www.trinnotech.com TGPF30N40P 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 30A 90A 60A Gate - Emitter Voltage, V GE [V] T C = 125 o C I C = 15A 0.1 1 10 0 200 400 600 800 1000 1200 Common Emitter V GE =0V, f=1MHz T c =25 oC Collector - Emitter Voltage, V CE [V] Cies Coes Cres Fig. 1 Output characteristics Fig. 2 Saturation voltage characteristics Fig. 3 Saturation voltage vs. collector current Fig. 4 Saturation voltage vs. gate bias Fig. 5 Saturation voltage vs. gate bias Fig. 6 Capacitance characteristics 0 1 2 3 4 5 0 30 60 90 120 150 VGE = 15V Collector - Emitter Voltage, V CE [V] -25 oC 25 oC 125 oC -25 0 25 50 75 100 125 150 0.5 1.0 1.5 2.0 2.5 I C = 15A I C = 60A Case Temperature, T C [ oC] V GE = 15V I C = 30A 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 30A 90A 60A Gate - Emitter Voltage, V GE [V] T C = 25 o C I C = 15A 0 2 4 6 8 10 0 50 100 150 200 6V 7V 8V 9V 11V 15V 20V Collector - Emitter Voltage, V CE [V] V GE = 5V 10V Tc = 25 oC 12V |
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