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FDS6690AS Datasheet(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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FDS6690AS Datasheet(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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1 / 5 page ![]() N-Channel Enhancement Mode Power MOSFET Features VDS= 30V, ID= 13 A RDS(ON) < 9 mΩ @ VGS = 10V RDS(ON) < 11 mΩ @ VGS = 4.5V ● Advanced Trench Technology ● Provide Excellent RDS(ON) and Low Gate Charge ● Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features SOP-8 Schematic diagram pin assignment Absolute Maximum Ratings T C = 25º C, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage V DS 30 V Continuous Drain Current I D 13 A Pulsed Drain Current (note1) I DM 50 A Gate-Source Voltage V GS ±20 V Power Dissipation P D 2.5 W Operating Junction and Storage Temperature Range T J, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient R thJA 50 ºC/W www.bychip.cn FDS6690AS v1.0 |
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