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NTMS3P03R2G Datasheet(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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NTMS3P03R2G Datasheet(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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1 / 5 page  ■ Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS -30 V Gate-source Voltage VGS ±20 V Drain Current TA=25 ℃ ID -5.1 A TA=100 ℃ -3 Pulsed Drain Current A IDM -40 A Total Power Dissipation B TA=25 ℃ PD 2 W TA=100 ℃ 0.8 Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■Thermal resistance Parameter Symbol Typ Max Units Thermal Resistance Junction-to-Ambient C Steady-State RθJA 50 60 ℃/W P-channel Enhancement Mode Power MOSFET Features VDS= -30V, ID= -5.1A RDS(ON) < 33 mΩ @ VGS = -10V RDS(ON) < 48 mΩ @ VGS = -4.5V ● Advanced Trench Technology ● Provide Excellent RDS(ON) and Low Gate Charge ● Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn SOP-8 Schematic diagram pin assignment NTMS3P03R2G v1.0 |
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