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MBR30170MFS Datasheet(PDF) 3 Page - ON Semiconductor

Part # MBR30170MFS
Description  Schottky Barrier Rectifier
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR30170MFS Datasheet(HTML) 3 Page - ON Semiconductor

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MBR30170MFS
www.onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
170
V
Continuous Forward Current (TC = 162°C, DC)
IF(DC)
30
A
Peak Repetitive Forward Current (TC = 159°C, Square Wave, Duty = 0.5)
IFRM
60
A
Non−Repetitive Peak Surge Current
Sinusoidal Halfwave, 8.3 ms
IFSM
540
A
Square wave, 1 ms
700
Square wave, 100 ms
1200
Non−Repetitive Avalanche Energy (TJ = 25°C)
EAS
280
mJ
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature Range (Note 1)
TJ
−55 to +175
°C
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient dPD/dTJ < 1/RqJA
The reliability may be affected by leakage current when device operates near to rated voltage and maximum junction temperature.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
55
°C/W
Thermal Resistance, Junction−to−Case Bottom (Note 2)
RqJCB
0.65
°C/W
Thermal Characterization, Junction−to−Case Top (Note 2)
yJCT
3.5
°C/W
Thermal Characterization, Junction−to−Lead of Cathode (Note 2)
yJLC
1.4
°C/W
2. Assume 600 mm2, 1 oz. copper bond pad on a FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage
(IF = 15 A, TJ = 25°C)
(IF = 15 A, TJ = 125°C)
(IF = 30 A, TJ = 25°C)
(IF = 30 A, TJ = 125°C)
VF
0.76
0.62
0.81
0.68
−
−
0.89
0.74
V
Instantaneous Reverse Current
(VR = Rated DC Voltage, TJ = 25°C)
(VR = Rated DC Voltage, TJ = 125°C)
IR
0.5
1.0
50
10
mA
mA
Junction Capacitance
(VR = 1 V, TJ = 25°C, f = 1 MHz)
CJ
821
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.



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