| Electronic Components Datasheet Search |
|
PIC18F258-E/LSQTP Datasheet(PDF) 336 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
PIC18F258-E/LSQTP Datasheet(HTML) 336 Page - Microchip Technology |
|
336 / 402 page ![]() PIC18FXX8 DS41159E-page 334 © 2006 Microchip Technology Inc. IDD Supply Current(2,3,4) D010C PIC18LFXX8 —21 28 mA EC, ECIO oscillator configurations VDD = 4.2V, -40°C to +85°C D010C PIC18FXX8 — 21 30 mA EC, ECIO oscillator configurations VDD = 4.2V, -40°C to +125°C, FOSC = 25 MHz D013 PIC18LFXX8 — — — 1.3 18 28 3 28 40 mA mA mA HS oscillator configurations FOSC = 6 MHz, VDD = 2.0V FOSC = 25 MHz, VDD = 5.5V HS + PLL osc configuration FOSC = 10 MHz, VDD = 5.5V D013 PIC18FXX8 — — 18 28 28 40 mA mA HS oscillator configurations FOSC = 25 MHz, VDD = 5.5V HS + PLL osc configuration FOSC = 10 MHz, VDD = 5.5V D014 PIC18LFXX8 —32 65 μA Timer1 oscillator configuration FOSC = 32 kHz, VDD = 2.0V D014 PIC18FXX8 — — 62 62 250 310 μA μA Timer1 oscillator configuration FOSC = 32 kHz, VDD = 4.2V, -40°C to +85°C FOSC = 32 kHz, VDD = 4.2V, -40°C to +125°C IPD Power-Down Current(3) D020 PIC18LFXX8 — — 0.3 2 4 10 μA μA VDD = 2.0V, -40 °C to +85°C VDD = 4.2V, -40 °C to +85°C D020 PIC18FXX8 — 2 10 μA VDD = 4.2V, -40°C to +85°C D021B — 6 40 μA VDD = 4.2V, -40°C to +125°C 27.1 DC Characteristics (Continued) PIC18LFXX8 (Industrial) Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial PIC18FXX8 (Industrial, Extended) Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial -40°C ≤ TA ≤ +125°C for extended Param No. Symbol Characteristic/ Device Min Typ Max Units Conditions Legend: Rows are shaded for improved readability. Note 1: This is the limit to which VDD can be lowered in Sleep mode, or during a device Reset, without losing RAM data. 2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD MCLR = VDD; WDT enabled/disabled as specified. 3: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD and VSS and all features that add delta current disabled (such as WDT, Timer1 Oscillator, BOR, ...). 4: For RC oscillator configuration, current through REXT is not included. The current through the resistor can be estimated by the formula Ir = VDD/2 REXT (mA) with REXT in kOhm. 5: The LVD and BOR modules share a large portion of circuitry. The ΔIBOR and ΔILVD currents are not additive. Once one of these modules is enabled, the other may also be enabled without further penalty. |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |