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P4C167 Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation

Part # P4C167
Description  ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
PDF  10 Pages
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C167 Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation

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P4C167
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Document # SRAM106 REV A
Notes:
9. CE and WE must be LOW for WRITE cycle.
10. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state.
11. Write Cycle Time is measured from the last valid address to the first
transition address.
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE
WE
WE
WE
WE CONTROLLED)(9)
Parameter
Symbol
–10
–12
–15
–20
–25
–35
–45
Min Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
t
WC
t
CW
t
AW
t
AS
Write Cycle Time
Chip Enable Time
to End of Write
Address Valid to
End of Write
Address Set-up
Time
t
WZ
t
DH
t
DW
t
AH
t
WP
Write Pulse Width
Address Hold Time
from End of Write
Data Valid to End
of Write
Data Hold Time
Write Enable to
Output in High Z
t
OW
Output Active from
End of Write
10
8
8
0
8
0
6
0
0
6
12
10
10
0
10
0
7
0
0
7
15
2
12
0
12
0
10
0
0
8
20
15
15
0
15
0
13
0
0
12
25
20
20
0
20
0
15
0
0
15
35
25
25
0
25
0
20
0
0
17
45
30
30
0
30
0
25
0
0
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC CHARACTERISTICS - WRITE CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)



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