IPD020N03LF2SATMA1 datasheet(6/13 Pages) INFINEON

6 / 13 page

StrongIRFET™ 2 PowerTransistor, 30 V

IPD020N03LF2S

Public

Datasheet

Revision 1.0

https://www.infineon.com

2024‑09‑20

Table 6 Gate charge characteristics 7)

Parameter

Symbol

Values

Unit Note/ Test Condition

Min. Typ. Max.

Gate plateau voltage

‑

3.3 ‑

V =15 V, =70 A, =0 to 4.5 V

Gate charge total 8)

‑

69 104 nC

V =15 V, =70 A, =0 to 10 V

Gate charge total, sync. FET 8)

‑

29 ‑

V =0.1 V, =0 to 4.5 V

Output charge 8)

‑

54 ‑

V =15 V, =0 V

See "Gate charge waveforms" for parameter definition

Defined by design. Not subject to production test.

Table 7 Reverse diode

Parameter

Symbol

Values

Unit Note/ Test Condition

Min. Typ. Max.

Diode continuous forward current

‑

106 A

T =25 °C

Diode pulse current

‑

572 A

T =25 °C

Diode forward voltage

‑

0.85 1.0 V

V =0 V, =70 A, =25 °C

Reverse recovery time

‑

21 ‑

V =15 V, =70 A, d /d =500 A/μs

i t

Reverse recovery charge

‑

71 ‑

V =15 V, =70 A, d /d =500 A/μs

i t

plateau

g(sync)

oss

S,pulse

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