TISP2240F3, TISP2260F3, TISP2290F3, TISP2320F3, TISP2380F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

2

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT

INFORMATION

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and

matched breakover control and are virtually transparent to the system in normal operation

The small-outline 8 pin assignment has been carefully chosen for the TISP series to maximise the inter-pin

clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand

ratings.

absolute maximum ratings

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

conditions.

3. Above 70°C, derate linearly to zero at 150°C lead temperature.

NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

5. Further details on capacitance are given in the Applications Information section.

† Typical value of the parameter, not a limit value.

RATING

SYMBOL

VALUE

UNIT

‘2240F3

‘2260F3

‘2290F3

‘2320F3

‘2380F3

± 180

± 200

± 220

± 240

± 270

V

Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)

A

1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs)

350

2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs)

175

8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)

120

10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)

60

5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)

50

0.5/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)

38

5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)

50

5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)

50

10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)

45

10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)

35

Non-repetitive peak on-state current (see Notes 2 and 3)

D Package

4

A rms

50 Hz,

1 s

P Package

6

SL Package

6

Initial rate of rise of on-state current,

Linear current ramp, Maximum ramp value < 38 A

250

A/µs

Junction temperature

-40 to +150

°C

Storage temperature range

-40 to +150

°C

PARAMETER

TEST CONDITIONS

TISP2240F3

TISP2260F3

TISP2290F3

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

Repetitive peak off-

state current

±10

±10

±10

µA

Off-state current

±10

±10

±10

µA

Off-state capacitance

f = 100 kHz,

Third terminal voltage = 0

(see Notes 4 and 5)

22†

40

22†

40

22†

40

pF

description (Continued)