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STG3P3M25N60 Datasheet(PDF) 1 Page - STMicroelectronics |
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STG3P3M25N60 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() PRELIMINARY DATA This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. May 2006 Rev1 1/12 12 ■ N-channel very fast PowerMESH™ IGBT ■ Lower on-voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction susceptbility) ■ Very soft ultra fast recovery antiparallel diode ■ High frequency operation up to 70 KHz ■ New generation products with tighter parameter distribution ■ One screw mounting ■ Compact design ■ Semitop®3 is a trademark of Semikron Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT, with outstanding performances. Applications ■ High frequency inverters ■ Motor drivers Internal schematic diagram General features Type VCES VCE(sat)(Max) @ IC=7A, Ts=25°C IC@80°C STG3P3M25N60 600V < 2.5V 25A SEMITOP®3 STG3P3M25N60 3 Phase inverter IGBT - SEMITOP®3 module www.st.com Order codes Sales Type Marking Package Packaging STG3P3M25N60 G3P3M25N60 SEMITOP®3 SEMIBOX |
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