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STG3P3M25N60 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STG3P3M25N60
Description  3 Phase inverter IGBT - SEMITOP®3 module
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STG3P3M25N60 Datasheet(HTML) 5 Page - STMicroelectronics

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STG3P3M25N60
Electrical characteristics
5/12
Table 5.
Switching on/off
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts= 25°C
(see Figure 9)
31
11
1600
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=125°C
(see Figure 9)
31
11.5
1500
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=25°C
(see Figure 9)
28
100
75
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=125°C
(see Figure 9)
66
150
130
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts=25°C
(see Figure 9)
220
330
550
µJ
µJ
µJ
Eon
(1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 300V, IC = 20A
RG= 33Ω, VGE= ±15V,
Ts= 125°C
(see Figure 9)
450
770
1220
µJ
µJ
µJ



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