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QW-J0019

SMD Switching Diode

REV:B

Comchip Technology CO., LTD.

BAW56-HF, BAV70-HF/99-HF

RoHS Device

Maximum Rating (at Ta=25°C unless otherwise noted)

V

70

VR

Reverse voltage

Parameter

Symbol

Value

Unit

°C/W

mW

mA

mA

500

225

200

400

PD

Io

IFM

Power dissipation

Peak forward surge current

@tp=1ms, TA=25°C

Average rectified current

RθJA

Non-repetitive peak forward current

Typical thermal resistance

IFSM

2

A

°C

Tj

°C

-65 to +150

TSTG

Storage temperature range

Operating junction temperature

150

Halogen Free

Company reserves the right to improve product design , functions and reliability without notice.

Features

- Fast switching device (Trr < 6.0nS).

- Power dissipation of 225mW.

- High stability and high reliability.

- Low reverse leakage.

Mechanical data

- Case: SOT-23, molded plastic.

- Epoxy UL: 94V-0.

- Mounting position: Any.

Note: Valid provided that electrodes are kept at ambient temperature.

Dimensions in inches and (millimeter)

SOT-23

0.118(3.00)

0.110(2.80)

0.055(1.40)

0.047(1.20)

0.079(2.00)

0.071(1.80)

0.041(1.05)

0.020(0.50)

0.006(0.15)

0.100(2.55)

0.089(2.25)

0.004(0.10)

0.012(0.30)

0.020(0.50)

0.003(0.00)

1

2

3

0.035(0.90)

0.012(0.30)

0.003(0.08)

Circuit Diagram

1

2

3

BAW56-HF

1

2

3

BAV70-HF

1

2

3

BAV99-HF