Electrical Characteristics (at Ta=25°C unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

IB = 100µA

VRB

V

SMD Switching Diode

Reverse voltage

Rating and Characteristic Curves (BAW56-HF, BAV70-HF/99-HF)

70

Reverse leakage current

µA

IR

VR = 70V

2.5

nS

pF

6

1.5

CT

TRR

Capacitance

Forward voltage

Reverse recovery time

VR = 0V, f = 1 MHz

1.00

1.25

0.715

VF

IF = 10mA

IF = 150mA

IF = IR = 10mA, RL = 100Ω

Irr = 0.1 x IR

V

IF = 1mA

IF = 50mA

0.855

100

75

125

Ambient Temperature, Ta (°C)

Fig.4 - Power Derating Curve

25

50

100

150

200

300

150

250

50

0

0

1.0

1.2

1.4

Fig.3 - Capacitance Characteristics

0

15

5

10

20

Ta = 25°C

f = 1MHz

Reverse Voltage, VR (V)

1.1

1.3

1

10

100

1000

Reverse Voltage, VR (V)

Fig.2 - Reverse Characteristics

0

60

20

40

80

0.1

1

10

100

300

Fig.1 - Forward Characteristics

Forward Voltage, VF (V)

0

1.2

0.4

0.8

1.6

Ta=100°C

Ta=25°C

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QW-J0019

REV:B

Comchip Technology CO., LTD.

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