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SC1480AEVB Datasheet(PDF) 8 Page - Semtech Corporation

Part # SC1480AEVB
Description  DDR and DDR Memory VTT power Supply Controller
PDF  23 Pages
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Manufacturer  SEMTECH [Semtech Corporation]
Direct Link  http://www.semtech.com
Logo SEMTECH - Semtech Corporation

SC1480AEVB Datasheet(HTML) 8 Page - Semtech Corporation

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 2003 Semtech Corp.
www.semtech.com
SC1480A
POWER MANAGEMENT
Applications Information (Cont.)
The current sensing circuit actually regulates the
inductor valley current (see .igure 2). This means that if
the current limit is set to 3A, the peak current through
the inductor would be 3A plus the peak ripple current,
and the average current through the inductor would be
3A plus 1/2 the peak-to-peak ripple current. The
equations for setting the valley current and calculating
the average current through the inductor are shown
below:
ILIMIT
ILOAD
IPEAK
TIME
Valley Current-Limit Threshold Point
.igure 2: Valley Current Limiting
The equation for the current limit threshold is as follows:
A
R
R
10e
I
SENSE
ILIM
6
-
LIMIT
•
=
Where (referring to .igure 3 on Page 14) R
ILIM is R5 and
R
SENSE is the RDS(ON) of the bottom .ET of Q1.
.or resistor sensing, a sense resistor is placed between
the source of the bottom .ET of Q1 and PGND. The
current through the source sense resistor develops a
voltage that opposes the voltage developed across R
ILIM.
When the voltage developed across the R
SENSE resistor
reaches the voltage drop across R
ILIM, a positive
over-current exists and the high side MOS.ET will not be
allowed to turn on. When using an external sense
resistor R
SENSE is the resistance of the sense resistor.
The current limit circuitry also protects against negative
over-current (i.e. when the current is flowing from the
load to PGND through the inductor and bottom MOS.ET).
In this case, when the bottom MOS.ET is turned on, the
phase node, LX, will be higher than PGND initially. The
SC1480A monitors the voltage at LX, and if it is greater
than a set threshold voltage of 125mV (nom.) the
bottom MOS.ET is turned off. The device then waits for
approximately 2µs and then DL goes high for 300ns (typ.)
once more to sense the current. This repeats until
either the over-current condition goes away or the part
latches off due to output overvoltage (see Output
Overvoltage Protection).
Power Good Output (VTT)
The ower good is an open-drain output and requires a
pull-up resistor. When the output voltage is 10% above
or below its set voltage (RE.OUT), PGD gets pulled low. It
is held low until the output voltage returns to within 10%
of the output set voltage. PGD is also held low during
start-up and will not be allowed to transition high until
soft start is over (440 switching cycles) and the output
reaches 90% of its set voltage. There is a 5µs delay built
into the PGD circuitry to prevent false transitions.
Output Overvoltage Protection (VTT)
When the output exceeds 10% of the its set voltage
(RE.OUT) the low-side MOS.ET is latched on. It stays
latched on and the controller is latched off until reset
(see below). There is a 5µs delay built into the OV
protection circuit to prevent false transitions. Note: to
reset VTT from any fault, VCCA or RE.IN must be toggled.
Output Undervoltage Protection (VTT)
When the output is 20% below its set voltage (RE.OUT)
the output is latched in a tri-stated condition. It stays
latched and the controller is latched off until reset (see
below). There is a 5µs delay built into the UV protection
circuit to prevent false transitions. Note: to reset VTT
from a any fault, VCCA or RE.IN must be toggled.
POR, UVLO and Softstart
An internal power-on reset (POR) occurs when VCCA
exceeds 3V, starting up the internal biasing. VCCA
undervoltage lockout (UVLO) circuitry inhibits switching
and also inhibits the RE.OUT buffer. When VCCA rises
above 4.2V, the VCCA UVLO circuitry enables the RE.OUT
buffer, resets the fault latch and soft start timer, and



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