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SC1480AEVB Datasheet(PDF) 10 Page - Semtech Corporation |
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SC1480AEVB Datasheet(HTML) 10 Page - Semtech Corporation |
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10 / 23 page ![]() 10 2003 Semtech Corp. www.semtech.com SC1480A POWER MANAGEMENT Applications Information (Cont.) The on pulse in the SC1480A is calculated to give a pseudo fixed frequency. Nevertheless, some frequency variation with line and load can be expected. This variation changes the output ripple voltage. Because constant on regulators regulate to the valley of the output ripple, ½ of the output ripple appears as a DC regulation error. .or example, if RE.OUT=0.9V, then the valley of the output ripple will be 0.9V. If the ripple is 20mV with VBAT = 6V, then the DC output voltage will be 0.91V. If the ripple is 30mV with VBAT = 25V, then the DC output voltage will be 0.915V. The output inductor value may change with current. This will change the output ripple and thus the DC output voltage. It will not change the frequency. Switching frequency variation with load can be minimized by choosing MOS.ETs with lower R DS(ON). High RDS(ON) MOS.ETs will cause the switching frequency to increase as the load current increases. This will reduce the ripple and thus the DC output voltage. Input (VBAT) Supply Selection The SC1480A can be configured so that VTT is generated directly from the battery. Alternatively, VTT can be generated from VDDQ. Since the battery configuration generally yields better overall efficiency and performance, the recommended method is to generate VTT from the battery. Design Procedure Prior to designing an output and making component selections, it is necessary to determine the input voltage range and the output voltage specifications. .or purposes of demonstrating the procedure the VTT output for the schematic in .igure 3 on Page 14 will be designed. The maximum input voltage (V BAT(MAX)) is determined by the highest AC adaptor voltage. The minimum input voltage (V BAT(MIN)) is determined by the lowest battery voltage after accounting for voltage drops due to connectors, fuses and battery selector switches. .or the purposes of this design example we will use a V BAT range of 8V to 20V. .our parameters are needed for the output: 1) nominal output voltage, V OUT (for DDR2 this is 0.9V) 2) static (or DC) tolerance, TOL ST (for DDR2 this is +/-40mV, or 4.44%, we will design for 4%) 3) transient tolerance, TOL TR and size of transient (for DDR2 this is undefined, so assume +/-8% for purposes of this demonstration). 4) maximum output current, I OUT (we will design for 3A) Switching frequency determines the trade-off between size and efficiency. Increased frequency increases the switching losses in the MOS.ETs, since losses are a function of VIN2. Knowing the maximum input voltage and budget for MOS.ET switches usually dictates where the design ends up. A default R tON value of 715kΩ is suggested as a starting point, but this is not set in stone. The first thing to do is to calculate the on-time, t ON, at V BAT(MIN) and VBAT(MAX), since this depends only upon VBAT, V OUT and RtON. .or VOUT < 3.3V: () s 10 50 V V 10 37 R 10 3 . 3 t 9 ) MIN ( BAT OUT 3 tON 12 ) MIN ( VBAT _ ON − − • + • • + • • = .rom this value of t ON we can calculate the nominal switching frequency as follows: ()Hz t V V f ) MIN ( VBAT _ ON ) MIN ( BAT OUT ) MIN ( VBAT _ SW • = and ()Hz t V V f ) MAX ( VBAT _ ON ) MAX ( BAT OUT ) MAX ( VBAT _ SW • = t ON is generated by a one-shot comparator that samples V BAT via RtON, converting this to a current. This current is used to charge an internal 3.3p. capacitor to V OUT. The equations above reflect this along with any internal components or delays that influence t ON. .or our DDR2 VTT example we select R tON = 715kΩ: t ON_VBAT(MIN) = 329ns and tON_VBAT(MAX) = 162ns f SW_VBAT(MIN) = 342kHz and fSW_VBAT(MAX) = 278kHz Now that we know t ON we can calculate suitable values for the inductor. To do this we select an acceptable inductor ripple current. The calculations below assume 50% of I OUT which will give us a starting place. |
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