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AM29LV008B Datasheet(PDF) 29 Page - Advanced Micro Devices

Part # AM29LV008B
Description  8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
PDF  39 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV008B Datasheet(HTML) 29 Page - Advanced Micro Devices

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Am29LV008T/Am29LV008B
29
PRELIMINARY
AC CHARACTERISTICS
Write (Erase/Program) Operations
Notes:
1. The duration of the program or erase operation is variable and is calculated in the internal algorithms.
2. Note 100% tested.
Parameter Symbols
Description
-90R
-100
-120
-150
JEDEC
Standard
Unit
tAVAV
tWC
Write Cycle Time (Note 2)
Min
90
100
120
150
ns
tAVWL
tAS
Address Setup Time
Min
0000
ns
tWLAX
tAH
Address Hold Time
Min
50
50
50
65
ns
tDVWH
tDS
Data Setup Time
Min
50
50
50
65
ns
tWHDX
tDH
Data Hold Time
Min
0000
ns
tOES
Output Enable Setup Time (Note 2)
Min
0000
ns
tOEH
Output
Enable Hold
Time
Read (Note 2)
Min
0000
ns
Toggle and Data Polling
(Note 2)
Min
10
10
10
10
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE High to WE Low)
Min
0000
ns
tELWL
tCS
CE Setup Time
Min
0000
ns
tWHEH
tCH
CE Hold Time
Min
0000
ns
tWLWH
tWP
Write Pulse Width
Min
50
50
50
65
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
30
30
35
ns
tWHWH1
tWHWH1
Programming Operation
Typ
9999
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 1)
Typ
1111
sec
tVCS
VCC Setup Time
Min
50
50
50
50
µs
tRB
Write Recovery Time from RY/BY
Min
0000
ns
tRH
RESET High Time Before Read
Min
50
50
50
50
ns
tRPD
RESET To Power Down Time
Min
20
20
20
20
µs
tBUSY
Program/Erase Valid to RY/BY Delay
Min
90
90
90
90
ns
tVIDR
Rise Time to VID
Min
500
500
500
500
ns
tRP
RESET Pulse Width
Min
500
500
500
500
ns
t RRB
RESET Low to RY/BY High
Max
20
20
20
20
µs
tRSP
RESET Setup Time for Temporary Sector
Unprotect
Min
4444
µs



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