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AM29LV008B Datasheet(PDF) 13 Page - Advanced Micro Devices

Part # AM29LV008B
Description  8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
PDF  39 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV008B Datasheet(HTML) 13 Page - Advanced Micro Devices

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Am29LV008T/Am29LV008B
13
PRELIMINARY
Table 5.
Am29LV008 Command Definitions
Legend:
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WEor CE pulse.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE or CE pulse.
SA = Address of the sector to be erased or verified. Address bits A19–A13 uniquely select any sector.
Notes:
1. All values are in hexadecimal.
2. See Table 1 for description of bus operations.
3. The data is 00h for an unprotected sector and 01h for a protected sector. The complete bus address is composed of the sector
address on A19–A13 and 02h on A7–A0.
4. Read and program functions in non-erasing sectors are allowed in the Erase Suspend mode. The Erase Suspend command
is valid only during a sector erase operation.
5. The Erase Resume command is valid only during the Erase Suspend mode.
6. Unless otherwise noted, address bits A19–A11 = X = don’t care.
Byte Programming
The device is programmed on a byte-by-byte basis.
Programming is a four-bus-cycle operation. There
are two “unlock” write cycles. These are followed by
the program command and address/data write cy-
cles. Addresses are latched on the falling edge of
CE or WE, whichever occurs later, while the data is
latched on the rising edge of CE or WE, whichever
occurs first. The rising edge of CE or WE, whichever
occurs first, initiates programming using the Em-
bedded Program Algorithm. Upon executing the
write command, the system is not required to pro-
vide further controls or timing. The device will auto-
matically provide adequate internally generated
program pulses and verify the programmed cell
margin.
The status of the Embedded Program Algorithm op-
eration can be determined three ways:
s DATA Polling of DQ7
Command
Sequence
Read/Reset
(Note 2)
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Read/Write
Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset/Read
1
XXX
F0
RA
RD
Autoselect
Manufacturer ID
3
555
AA
2AA
55
555
90
X00
01
Autoselect
Device ID
(Top Boot Block)
3
555
AA
2AA
55
555
90
X01
3E
Autoselect
Device ID
(Bottom Boot Block)
3
555
AA
2AA
55
555
90
X01
37
Autoselect
Sector Protect Verify
(Note 3)
3
555
AA
2AA
55
555
90
SA
X02
00
01
Byte Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend
(Note 4)
1
XXX
B0
Erase Resume
(Note 5)
1
XXX
30



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