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GD50MLX65F1S Datasheet(PDF) 5 Page - StarPower Europe AG |
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GD50MLX65F1S Datasheet(HTML) 5 Page - StarPower Europe AG |
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5 / 11 page ![]() GD50MLX65F1S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 10/18/2018 5/11 preliminary NTC Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R25 Rated Resistance 22.0 k Ω ∆R/R Deviation of R100 TC=100 oC,R 100=1486.1 Ω -5 5 % P25 Power Dissipation 200 mW B25/50 B-value R2=R25exp[B25/50(1/T2- 1/(298.15K))] 4000 K Module Characteristics T C=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit RthJC Junction-to-Case (per T1-T4 IGBT) Junction-to-Case (per D1-D4 Diode) Junction-to-Case (per D5,D6 Diode) 0.691 1.175 0.995 0.760 1.293 1.094 K/W RthCH Case-to-Heatsink (per T1-T4 IGBT) Case-to-Heatsink (per D1-D4 Diode) Case-to-Heatsink (per D5,D6 Diode) Case-to-Heatsink (per Module) 0.271 0.461 0.390 0.035 K/W M Mounting Torque, Screw M4 2.0 2.2 N.m G Weight of Module 26 g |
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