PIC18F8720/8620/6720/6620

DS80172C-page 6

© 2005 Microchip Technology Inc.

4.

Module: Voltage Reference

Specifications

In Table 26-2: Voltage Reference Specifications

replaced with the following:

TABLE 26-2:

VOLTAGE REFERENCE SPECIFICATIONS

5.

Module: Memory Programming

Requirements

In Table 26-4: Memory Programming Require-

Note 4 have been added:

TABLE 26-4:

MEMORY PROGRAMMING REQUIREMENTS

Param

No.

Sym

Characteristics

Min

Typ

Max

Units

Comments

D311

Absolute Accuracy

—

—

1/2

LSb

Note 1:

Settling time measured while VRR = 1 and VR<3:0> transitions from ‘0000’ to ‘1111’.

DC Characteristics

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C

-40°C

Param

No.

Sym

Characteristic

Min

Typ†

Max

Units

Conditions

Data EEPROM Memory

D124

Total Number of Erase/Write

Cycles before Refresh (Note 4)

1M

100K

10M

1M

—

—

E/W

E/W

-40

°C to +85°C

-40

°C to +125°C

† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1:

These specifications are for programming the on-chip program memory through the use of table write

instructions.

2:

The pin may be kept in this range at times other than programming, but it is not recommended.

3:

Retention time is valid, provided no other specifications are violated.

4:

Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM endurance.